The overarching goal of this thrust is to bridge the critical gaps in memory and storage technologies to support the compute workloads of the future. This will be accomplished by enabling materials and physics-based innovations in device technologies that are closely coupled to application-level benchmarking and workload-centric memory organization. Our research will present new approaches for three main categories of memory and storage technologies, (1) embedded memories including neuromorphic memories, namely ferroelectric, spintronic, magnetoelectric multiferroic, and electrochemical ionic devices, and 3-D embedded DRAMs, (2) scalable NAND FLASH technologies, based on vertical TMDs, and oxide semiconductors.