Theme one of the Center SUPREME aims to demonstrate breakthroughs in transistor design and fabrication technology that can deliver unprecedented performance for a wide variety of Digital and Analog applications. For this, our Center will leverage the unique properties of extreme materials, mainly two-dimensional (2D) transition metal dichalcogenides (TMD)’s, III-Nitride semiconductors and high-k dielectrics optimized for them. In addition to demonstrating the ultimate transistor structures for applications such as FEOL logic, RF and power management, we will also explore new devices with the potential to replace the transistor switch in a future beyond-CMOS platform. The system-level impact of all these devices will be carefully assessed through the development of suitable compact models.