Bullen, H. J.; Vishwanath, S.; Nahm, R. K.; Xing, G. H.; Engstrom, J. R. Nucleation, growth, and stability of WSe₂ thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation. J. Vac. Sci. Technol. A 2022, 40, 012201. DOI: 10.1116/6.0001407

Suh, T.; Yang, Y.; Sohn, H. W.; DiStasio Jr., R. A.; Engstrom, J. R. Area-selective atomic layer deposition enabled by competitive adsorption. J. Vac. Sci. Technol. A 2020, 34, 062411. DOI: 10.1116/6.0000497

Suh, T.; Yang, Y.; Zhao, P.; Lao, K. U.; Ko, H-Y.; Wong, J.; DiStasio Jr., R. A.; Engstrom, J. R. Competitive Adsorption as a Route to Area-Selective Deposition. ACS Appl. Mater. Inter. 2020, 12 (8), 9989-9999. DOI: 10.1021/acsami.9b22065

Chen, J-R.; Zhang, W.; Nahm, R. K.; DiFeo, M. A.; Engstrom, J. R. Design and characterization of a microreactor for spatially confined atomic layer deposition and in situ UHV surface analysis. J. Vac. Sci. Technol. A 2017, 35, 061604. DOI: 10.1116/1.4996553

Nahm, R. K.; Bullen, H. J.; Suh, T.; Engstrom, J. R. Faster Is Smoother and So Is Lower Temperature: The Curious Case of Thin Film Growth of Tetracene on SiO₂. J. Phys. Chem. C 2017, 121 (15), 8464–8472. DOI: 10.1021/acs.jpcc.7b01369

Nahm, R. K.; Engstrom, J. R. Who’s on first? Tracking in real time the growth of multiple crystalline phases of an organic semiconductor: Tetracene on SiO₂. J. Chem. Phys. 2017, 146, 052815. DOI: 10.1063/1.4971288

Engstrom, J. R.; Kummel, A. C. Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching. J. Chem. Phys. 2017, 146, 052501. DOI: 10.1063/1.4975141

Nahm, R. K.; Engstrom, J. R. Unexpected Effects of the Rate of Deposition on the Mode of Growth and Morphology of Thin Films of Tetracene Grown on SiO₂. J. Phys. Chem. C 2016, 120 (13), 7183–7191. DOI: 10.1021/acs.jpcc.6b00963

Kish, E. R.; Nahm, R. K.; Woll, A. R.; Engstrom, J. R. When the Sequence of Thin Film Deposition Matters: Examination of Organic-on-Organic Heterostructure Formation Using Molecular Beam Techniques and in Situ Real Time X-ray Synchrotron Radiation. J. Phys. Chem. C 2016, 120 (11), 6165–6179. DOI: 10.1021/acs.jpcc.6b01717

Zhang, H.; Yang, J.; Chen, J-R.; Engstrom, J. R.; Hanrath, T.; Wise, F. W. Tuning of Coupling and Surface Quality of PbS Nanocrystals via a Combined Ammonium Sulfide and Iodine Treatment. J. Phys. Chem. Lett. 2016, 7 (4), 642–646. DOI: 10.1021/acs.jpclett.5b02813

Zhang, W.; Engstrom, J. R. Effect of Substrate Composition on Atomic Layer Deposition Using Self-Assembled Monolayers as Blocking Layers. J. Vac. Sci. Technol. A 2016, 34, 01A107. DOI: 10.1116/1.4931722

Kish, E. R.; Desai, T. V.; Greer, D. R.; Woll, A. R.; Engstrom, J. R. Nucleation of Diindenoperylene and Pentacene at Thermal and Hyperthermal Incident Kinetic Energies. J. Vac. Sci. Technol. A 2015, 33, 031511. DOI: 10.1116/1.4916885

Zhang, W.; Nahm, R. K.; Ma, P. F.; Engstrom, J. R. Probing ultrathin film continuity and interface abruptness with X-ray photoelectron spectroscopy and low-energy ion scattering. J. Vac. Sci. Technol. A 2013, 31, 061101. DOI: 10.1116/1.4812695

Hughes, K. J.; Dube, A.; Sharma, M.; Engstrom, J. R. Initial Stages of Atomic Layer Deposition of Tantalum Nitride on SiO₂ and Porous Low-κ Substrates Modified by a Branched Interfacial Organic Layer: Chemisorption and the Transition to Steady-State Growth. J. Phys. Chem. C 2012, 116, 21948–21960. DOI: 10.1021/jp3086232

Desai, T. V.; Woll, A. R.; Engstrom, J. R. Thin Film Growth of Pentacene on Polymeric Dielectrics: Unexpected Changes in the Evolution of Surface Morphology with Substrate. J. Phys. Chem. C 2012, 116, 12541–12552. DOI: 10.1021/jp300635u

Hughes, K. J.; Engstrom, J. R. Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry. J. Vac. Sci. Technol. A 2012, 30, 01A102. DOI: 10.1116/1.3625564

Woll, A. R.; Desai, T. V.; Engstrom, J. R. Quantitative modeling of in situ X-ray reflectivity during organic molecule thin film growth. Phys. Rev. B 2011, 84, 1-14. DOI: 10.1103/PhysRevB.84.075479

Desai, T. V.; Kish, E. R.; Woll, A. R.; Engstrom, J. R. Hyperthermal Growth of N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic Diimide on Self-Assembled Monolayers: Adsorption Dynamics and Sub- and Multilayer Thin Film Growth. J. Phys. Chem. C 2011, 115 (37), 18221-18234. DOI: 10.1021/jp204495u

Desai, T. V.; Hong, S.; Woll, A. R.; Hughes, K. J.; Kaushik, A. P.; Clancy, P.; Engstrom, J. R. Hyperthermal organic thin film growth on surfaces terminated with self-assembled monolayers. I. The dynamics of trapping. J. Chem. Phys. 2011, 134, 224702. DOI: 10.1063/1.3591965

Desai, T. V.; Woll, A. R.; Schreiber, F.; Engstrom, J. R. Nucleation and Growth of Perfluoropentacene on Self-Assembled Monolayers: Significant Changes in Island Density and Shape with Surface Termination. J. Phys. Chem. C 2010, 114, 20120-20129. DOI: 10.1021/jp107518f

Hughes, K. J.; Engstrom, J. R. Interfacial organic layers: Tailored surface chemistry for nucleation and growth. J. Vac. Sci. Technol. A 2010, 28, 1033. DOI: 10.1116/1.3480920

Goose, J. E.; Killampalli, A. S.; Clancy, P.; Engstrom, J. R. Molecular-Scale Events in Hyperthermal Deposition of Organic Semiconductors Implicated from Experiment and Molecular Simulation. J. Phys. Chem. C 2009, 113, 6068-6073. DOI: 10.1021/jp807207v

Amassian, A.; Desai, T. V.; Kowarik, S.; Hong, S.; Woll, A. R.; Malliaras, G. G.; Schreiber, F.; Engstrom, J. R. Coverage dependent adsorption dynamics in hyperthermal organic thin film growth. J. Chem. Phys. 2009, 130, 124701. DOI: 10.1063/1.3088835

Amassian, A.; Pozdin, V. A.; Desai, T. V.; Hong, S.; Woll, A. R.; Ferguson, J. D.; Brock, J. D.; Malliaras, G. G.; Engstrom, J. R. Post-deposition reorganization of pentacene films deposited on low-energy surfaces. J. Mater. Chem. 2009, 19, 5580. DOI: 10.1039/b907947e

Sharma, M.; Komiyama, M.; Engstrom, J. R. Observation from scanning tunneling microscopy of a striped phase for octanethiol adsorbed on Au(111) from solution. Langmuir 2008, 24, 9937-9940. DOI: 10.1021/la800905e

Sharma, M.; Dube, A.; Hughes, K. J.; Engstrom, J. R. Gas-surface reactions between pentakis(dimethylamido)tantalum and surface grown hyperbranched polyglycidol films. Langmuir 2008, 24, 8610-8619. DOI: 10.1021/la800790u

Papadimitratos, A.; Amassian, A.; Killampalli, A. S.; Mack, J. L.; Malliaras, G. G.; Engstrom, J. R. Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source. Appl. Phys. A 2008, 95, 29-35. DOI: 10.1007/s00339-008-5025-x

Hong, S.; Amassian, A.; Woll, A. R.; Bhargava, S.; Ferguson, J. D.; Malliaras, G. G.; Brock, J. D.; Engstrom, J. R. Real time monitoring of pentacene growth on SiO₂ from a supersonic source. Appl. Phys. Lett. 2008, 92, 253304. DOI: 10.1063/1.2946497

Sharma, M.; Dube, A.; Engstrom, J. R. Growth of first generation dendrons on SiO₂: controlling chemisorption of transition metal coordination complexes. J. Am. Chem. Soc. 2007, 129, 15022-15033. DOI: 10.1021/ja0752944

Dube, A.; Sharma, M.; Ma, P. F.; Ercius, P. A.; Muller, D. A.; Engstrom, J. R. Effects of Interfacial Organic Layers on Nucleation, Growth, and Morphological Evolution in Atomic Layer Thin Film Deposition. J. Phys. Chem. C 2007, 111, 11045-11058. DOI: 10.1021/jp072264e

Killampalli, A. S.; Engstrom, J. R. Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane. Appl. Phys. Lett. 2006, 88, 143125. DOI: 10.1063/1.2182012

Haran, M.; Engstrom, J. R.; Clancy, P. Ab initio calculations of the reaction mechanisms for metal-nitride deposition from organo-metallic precursors onto functionalized self-assembled monolayers. J. Am. Chem. Soc. 2006, 128, 836-847. DOI: 10.1021/ja054685k

Dube, A.; Sharma, M.; Ma, P. F.; Engstrom, J. R. Effects of interfacial organic layers on thin film nucleation in atomic layer deposition. Appl. Phys. Lett. 2006, 89, 164108. DOI: 10.1063/1.2360902

Ma, P. F.; Dube, A.; Killampalli, A. S.; Engstrom, J. R. A supersonic molecular beam study of the reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers. J. Chem. Phys. 2006, 125, 34706. DOI: 10.1063/1.2220562

Killampalli, A. S.; Schroeder, T. W.; Engstrom, J. R. Nucleation of pentacene on silicon dioxide at hyperthermal energies. Appl. Phys. Lett. 2005, 87, 033110. DOI: 10.1063/1.1990254

Killampalli, A. S.; Ma, P. F.; Engstrom, J. R. The Reaction of Tetrakis(dimethylamido)titanium with Self-Assembled Alkyltrichlorosilane Monolayers Possessing -OH, -NH₂, and -CH₃ Terminal Groups. J. Am. Chem. Soc. 2005, 127, 6300–6310. DOI: 10.1021/ja047922c

Dube, A.; Chadeayne, A. R.; Sharma, M.; Wolczanski, P. T.; Engstrom, J. R. Covalent attachment of a transition metal coordination complex to functionalized oligo(phenylene-ethynylene) self-assembled monolayers. J. Am. Chem. Soc. 2005, 127, 14299-14309. DOI: 10.1021/ja054378e

Cypes, S. H.; Engstrom, J. R. Analysis of a toluene stripping process: a comparison between a microfabricated stripping column and a conventional packed tower. Chem. Eng. J. 2004, 101, 49-56. DOI: 10.1016/j.cej.2003.10.014

Schroeder, T. W.; Engstrom, J. R. The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition. J. Appl. Phys. 2004, 95, 6470. DOI: 10.1063/1.1728287

Schroeder, T. W.; Lam, A. M.; Ma, P. F.; Engstrom, J. R. Effects of atomic hydrogen on the selective area growth of Si and Si_1-xGe_x thin films on Si and SiO₂ surfaces: Inhibition, nucleation, and growth. J. Vac. Sci. Technol. 2004, 22, 578. DOI: 10.1116/1.1699336

Ma, P. F.; Schroeder, T. W.; Engstrom, J. R. Nucleation of copper on TiN and SiO₂ from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane. Appl. Phys. Lett. 2002, 80, 2604. DOI: 10.1063/1.1469687

Schroeder, T. W.; Ma, P. F.; Lam, A. M.; Zheng, Y-J.; Engstrom, J. R. Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation. Appl. Phys. Lett. 2001, 79, 2181. DOI: 10.1063/1.1408271

Zheng, Y-J.; Ma, P. F.; Engstrom, J. R. Etching by atomic hydrogen of Ge overlayers on Si(100). J. Appl. Phys. 2001, 90, 3614. DOI: 10.1063/1.1394898

Lee, D.; Blakely, J. M.; Schroeder, T. W.; Engstrom, J. R. A growth method for creating arrays of atomically flat mesas on silicon. Appl. Phys. Lett. 2001, 78, 1349. DOI: 10.1063/1.1352656

Zheng, Y-J.; Lam, A. M.; Engstrom, J. R. Modeling of Ge surface segregation in vapor-phase deposited Si_1-xGe_x thin films. Appl. Phys. Lett. 1999, 75, 817. DOI: 10.1063/1.124523

Chen, G.; Boyd, I. D.; Engstrom, J. R. Three dimensional modeling of silicon deposition process scale-up employing supersonic jets II. J. Vac. Sci. Technol. 1999, 17, 978. DOI: 10.1116/1.581673

Roadman, S. E.; Levine, S. W.; Zheng, Y-J.; Clancy, P.; Engstrom, J. R. Pattern formation and shadow instability in collimated energetic molecular beam growth of silicon. Appl. Phys. Lett. 1999, 74, 25. DOI: 10.1063/1.123121

Lam, A. M.; Zheng, Y-J.; Engstrom, J. R. The effect of strain on gas–surface reactivity in group-IV heteroepitaxial systems. Chem. Phys. Lett. 1998, 292, 229-234. DOI: 10.1016/S0009-2614(98)00668-X

Roadman, S. E.; Maity, N.; Carter, J. N.; Engstrom, J. R. Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams. J. Vac. Sci. Technol. 1998, 16, 3423. DOI: 10.1116/1.581497

Lam, A. M.; Zheng, Y-J.; Engstrom, J. R. Direct in situ characterization of Ge surface segregation in strained Si_1-xGe_x epitaxial thin films. Appl. Phys. Lett. 1998, 73, 2027. DOI: 10.1063/1.122357

Lam, A. M.; Zheng, Y-J.; Engstrom, J. R. Gas—surface reactivity in mixed-crystal systems: the reaction of GeH₄ and Ge₂H₆ on Si surfaces. Surf. Sci. 1997, 393, 205-221. DOI: 10.1016/S0039-6028(97)00587-6

Jones, M. E.; Roadman, S. E.; Lam, A. M.; Eres, G.; Engstrom, J. R. Supersonic molecular beam studies of the dissociative chemisorption of GeH₄ and Ge₂H₆ on the Ge(100) and Ge(111) surfaces. J. Chem. Phys. 1996, 105, 7140. DOI: 10.1063/1.472516

Maity, N.; Xia, L-Q.; Roadman, S. E.; Engstrom, J. R. The adsorption of PH₃ on the Si(111)-(7 × 7) surface: an example of autocatalytic dissociative chemisorption. Surf. Sci. 1995, 344, L1201-L1206. DOI: 10.1016/0039-6028(95)01005-X

Maity, N.; Xia, L-Q.; Roadman, S. E.; Engstrom, J. R. A supersonic molecular beam study of the chemisorption of PH₃ on the Si(100) surface. Surf. Sci. 1995, 344, 203-220. DOI: 10.1016/0039-6028(95)00834-9

Xia, L-Q.; Jones, M. E.; Maity, N.; Engstrom, J. R. Supersonic molecular beam scattering as a probe of thin film deposition processes. J. Vac. Sci. Technol. 1995, 13, 2651. DOI: 10.1116/1.579464

Jones, M. E.; Shealy, J. R.; Engstrom, J. R. Thermal and plasma-assisted nitridation of GaAs(100) using NH₃. Appl. Phys. Lett. 1995, 67, 542. DOI: 10.1063/1.115182

Xia, L-Q.; Jones, M. E.; Maity, N.; Engstrom, J. R. Dissociation and pyrolysis of Si₂H₆ on Si surfaces: The influence of surface structure and adlayer composition. J. Chem. Phys. 1995, 103, 1691. DOI: 10.1063/1.469739

Maity, N.; Xia, L-Q.; Engstrom, J. R. Effect of PH₃ on the dissociative chemisorption of SiH₄ and Si₂H₆ on Si(100): Implications on the growth of in situ doped Si thin films. Appl. Phys. Lett. 1995, 66, 1909. DOI: 10.1063/1.113318

Xia, L-Q.; Engstrom, J. R. The role of surface corrugation in direct translationally activated dissociative adsorption. J. Chem. Phys. 1994, 101, 5329. DOI: 10.1063/1.468424

Engstrom, J. R.; Hansen, D. A.; Furjanic, M. J.; Xia, L-Q. Dynamics of the dissociative adsorption of disilane on Si(100): Energy scaling and the effect of corrugation. J. Chem. Phys. 1993, 99, 4051. DOI: 10.1063/1.466228

Engstrom, J. R.; Xia, L-Q.; Furjanic, M. J.; Hansen, D. A. Dissociative adsorption of Si₂H₆ on silicon at hyperthermal energies: The influence of surface structure. Appl. Phys. Lett. 1993, 63, 1821. DOI: 10.1063/1.110674